Joy C. Perkinson

Joy C. Perkinson

Joy C. Perkinson

G5 - Applied Physics
McKay Lab Room 401, 9 Oxford Street Cambridge, MA 02138

My research is on the nanoscale morphology evolution of surfaces under ion bombardment.  In particular, I am interested in elemental and binary compound semiconductors under noble gas ion irradiation.  Current projects investigate the nonlinear-regime evolution of nanopatterns using grazing incidence small angle x-ray scattering (GISAXS), stress accumulation in films during ion irradiation measured using a multi-beam optical stress sensor (MOSS), composition variation in binary compound semiconductors, and steep shape evolution under focused ion beam (FIB) irradiation.