Joy C. Perkinson

Joy C. Perkinson

Joy C. Perkinson

Graduate Student, Harvard School of Engineering and Applied Sciences
McKay Lab Room 401, 9 Oxford Street Cambridge, MA 02138

My research is on the nanoscale morphology evolution of surfaces under ion bombardment.  In particular, I am interested in elemental and binary compound semiconductors under noble gas ion irradiation.  Current projects investigate the nonlinear-regime evolution of nanopatterns using grazing incidence small angle x-ray scattering (GISAXS) at Brookhaven National Laboratory, stress accumulation in films during ion irradiation measured using a multi-beam optical stress sensor (MOSS), and composition variations in binary compound semiconductors.  Recently, I have been learning to simulate these systems.  I have been learning to use the monte carlo software SDTrimSP.  I will also be traveling to the University of Helsinki in the upcoming months to collaborate with the Nordlund group on molecular dynamics (MD) simulations.