Citation:
J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M. J. Aziz, and T. Buonassisi. 2013. “Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon.” J. Appl. Phys., 114, Pp. 103701.
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