Citation:
M. J. Aziz. 2001. “Stress Effects on Defects and Dopant Diffusion in Si.” Mater. Sci. Semicond. Process., 4, Pp. 397-403.
Aziz Group
Electrochemical engineering for energy and the environment
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Recent Publications
- 200-fold lifetime extension of 2,6-dihydroxyanthraquinone during flow battery operation
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