Aziz MJ. Pressure and Stress Effects on Diffusion in Si. Defect and Diffusion Forum. 1998;153-155 :1-10. mja103.pdf
Bernstein N, Aziz MJ, Kaxiras E. The Amorphous-Crystal Interface in Silicon: A Tight-Binding Simulation. Phys. Rev. B. 1998;58 :4579-4583. mja104.pdf
Bernstein N, Aziz MJ, Kaxiras E. Atomistic Features of the Amorphous-Crystal Interface in Silicon. Journal of Computer Aided Materials Design. 1998;5 :55-60. mja105.pdf
Barvosa-Carter W, Aziz MJ, Gray LJ, Kaplan T. Kinetically Driven Growth Instability in Stressed Solids. Phys. Rev. Lett. 1998;81 :1445-1448. mja106.pdf
Aziz MJ. Introduction to 'The Molecular Mechanism of Solidification', by J.W. Cahn, W.B. Hillig and G.W. Sears. In: The Selected Works of John W. Cahn, eds. W.C. Johnson and W.C. Carter. Warrendale, PA: TMS-AIME ; 1998. pp. 207-209. mja108.pdf
Aziz MJ, Spaepen F. Test of Dendrite Growth Theory and Nucleation of Polytetrahedral Phases from the Melt. Proceedings of the 1998 Microgravity Materials Science Conference. 1998. mja109.pdf
Erlebacher JD, Aziz MJ. Morphological Equilibration of Rippled and Dimpled Crystal Surfaces: The Role of Terrace-Width Fluctuations. Surf. Sci. 1997;374 :427-442. mja086.pdf
Aziz MJ. Experimental Constraints on Nonequilibrium Interface Kinetic Models. Mater. Sci. Eng. A. 1997;226-228 :255-260. mja088.pdf
Mitha S, Aziz MJ, Schiferl D, Poker DB. Effect of Pressure on As Diffusion in Ge: Evidence Against Simple Vacancy Mechanism. Defect and Diffusion Forum. 1997;143-147 :1041-1046. mja090.pdf
Schwarz M, Arnold CB, Aziz MJ, Herlach DM. Dendritic Growth Velocity and Diffusive Speed in Solidification of Undercooled Dilute Ni-Zr Melts. Mater. Sci. Eng. A. 1997;226-228 :420-424. mja091.pdf
Aziz MJ. Thermodynamics of Diffusion under Pressure and Stress: Relation to Point Defect Mechanisms. Appl. Phys. Lett. 1997;70 :2810-2812. mja092.pdf
Zhao Y, Aziz MJ, Mitha S, Schiferl D. Effect of Pressure on Boron Diffusion in Silicon. Mater. Res. Soc. Symp. Proc. 1997;442 :305-310. mja093.pdf
Barvosa-Carter W, Aziz MJ. Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness during Solid Phase Epitaxial Growth in Si. Mater. Res. Soc. Symp. Proc. 1997;441 :75-80. mja094.pdf
Erlebacher JD, Aziz MJ. Ion-Sputter Induced Rippling of Si(111). Mater. Res. Soc. Symp. Proc. 1997;440 :461-466. mja095.pdf
Erlebacher JD, Aziz MJ. Surface Relaxation Mechanisms in the Morphological Equilibration of Crystal Surfaces. Mater. Res. Soc. Symp. Proc. 1997;440 :59-64. mja096.pdf
McCamy JW, Aziz MJ. Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition. Mater. Res. Soc. Symp. Proc. 1997;441 :621-626. mja097.pdf
Aziz MJ. Nonhydrostatic Stress Effects on Boron Diffusion in Si. Mater. Res. Soc. Symp. Proc. 1997;469 :37-46. mja099.pdf
Aziz MJ, Circone S, Agee CB. Vanishing Atomic Migration Barrier in SiO_2. Nature. 1997;390 (596-599). mja100.pdf
Isono N, Smith PM, Turnbull D, Aziz MJ. Anomalous Diffusion of Fe in Liquid Al Measured by the Pulsed Laser Technique. Metall. Mat. Trans. A. 1996;27 :725-730. mja074.pdf
Aziz MJ. Interface Attachment Kinetics in Alloy Solidification. Metall. Mat. Trans. A. 1996;27 :671-686. mja081.pdf