A.-V. Phan, T. Kaplan, L.J. Gray, W. Barvosa-Carter, and M. J. Aziz. 2002. “Modeling a Growth Instability in Stressed Boron Doped Silicon.” Proceedings of Fifth International Conference on Modeling and Simulation of Microsystems.

A. Cuenat and M. J. Aziz. 2002. “Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation.” Mater. Res. Soc. Symp. Proc., 696, Pp. N2.8.1-N2.8.6.

Y Huang, M. J. Aziz, J.W. Hutchinson, A. G. Evans, R. Saha, and W.D. Nix. 2001. “Comparison of Mechanical Properties of Ni_3Al Thin Films in Disordered FCC and Ordered L1_2 Phases.” Acta Materialia, 49, Pp. 2853-2861.

O.D. Dubon, P.G. Evans, M.F. Chisholm, D. A. Muller, J.F. Chervinsky, M. J. Aziz, F. Spaepen, and J.A. Golovchenko. 2001. “Doping by Metal-mediated Epitaxy: Growth of As Delta-doped Si Through a Pb Monolayer.” Appl. Phys. Lett., 78, Pp. 1505-1507.

E. Chason, J. Erlebacher, M. J. Aziz, J.A. Floro, and M.B. Sinclair. 2001. “Dynamics of Pattern Formation During Low Energy Ion Bombardment of Si(001).” Nucl. Instr. Meth. B, 178, Pp. 55-61.

J.D. Erlebacher, M. J. Aziz, A. Karma, N. Dmitrov, and K. Sieradzki. 2001. “Evolution of Nanoporosity in Dealloying.” Nature, 410, Pp. 450-453.

P.G. Evans, O.D. Dubon, J.F. Chervinsky, M. J. Aziz, F. Spaepen, and J.A. Golovchenko. 2001. “Influence of Surface Termination on the Growth and Evaporation of Pb Layers on As-Terminated Si(111).” In .

J. Li, D. Stein, C. McMullan, D. Branton, M. J. Aziz, and J.A. Golovchenko. 2001. “Ion-Beam Sculpting at Nanometre Length Scales.” Nature, 412, Pp. 166-177.

P.G. Sanders, M.O. Thompson, T.J. Renk, and M. J. Aziz. 2001. “Liquid Titanium Solute Diffusion Measured by Pulsed Ion-Beam Melting.” Metall. Mat. Trans. A, 32, Pp. 2969-2974.

C.B. Arnold and M. J. Aziz. 2001. “Model for Dopant and Impurity Segregation During Vapor Phase Growth.” Mater. Res. Soc. Symp. Proc., 648, Pp. P3.11.1-P3.11.7.

A.-V. Phan, T. Kaplan, L.J. Gray, D. Adalsteinsson, J.A. Sethian, W. Barvosa-Carter, and M. J. Aziz. 2001. “Modeling a Growth Instability in a Stressed Solid.” Modelling and Simulation in Materials Science and Engineering, 9, Pp. 309-325.

M. J. Aziz. 2001. “Stress Effects on Defects and Dopant Diffusion in Si.” Mater. Sci. Semicond. Process., 4, Pp. 397-403.

W. Barvosa-Carter and M. J. Aziz. 2001. “Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si.” Appl. Phys. Lett., 79, Pp. 356-358.

N. Bernstein, M. J. Aziz, and E. Kaxiras. 2000. “Atomistic Simulations of Solid Phase Epitaxy in Silicon.” Phys. Rev. B, 61, Pp. 6696-6700.

J.A. Kittl, P.G. Sanders, M. J. Aziz, D.P. Brunco, and M.O. Thompson. 2000. “Complete Experimental Test for Kinetic Models of Rapid Alloy Solidification.” Acta Materialia, 48, Pp. 4797-4811.

M. J. Aziz. 2000. “On Kinetically vs. Energetically Driven Growth Instabilities in Solid and Vapor Phase Epitaxy.” Mater. Res. Soc. Symp. Proc., 618, Pp. 233-241.

J.F. Sage, W. Barvosa-Carter, and M. J. Aziz. 2000. “Morphological Instability of Growth Fronts Due to Stress-Induced Mobility Variations.” Appl. Phys. Lett., 77, Pp. 516-518.

J.D. Erlebacher, M. J. Aziz, E. Chason, M.B. Sinclair, and J.A. Floro. 2000. “Nonclassical Smoothening of Nano-Scale Surface Corrugations.” Phys. Rev. Lett., 84, Pp. 5800-5803.

J.D. Erlebacher, M. J. Aziz, E. Chason, M.B. Sinclair, and J.A. Floro. 2000. “Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001).” J. Vac. Sci. Technol. A, 18, Pp. 115-120.

P.G. Sanders and M. J. Aziz. 2000. “Terrestrial Measurements of Diffusivities in Refractory Melts by Pulsed Melting of Thin Films.” Proceedings of the 2000 Microgravity Materials Science Conference. Washington, DC: National Aeronautics and Space Administration.