Nygren E, Aziz MJ, Turnbull D, Poate JM, Jacobson DC, Hull R. Pressure dependence of arsenic diffusivity in silicon. Appl. Phys. Lett. 1985;47 :105-107. mja011.pdf
Nygren E, Aziz MJ, Turnbull D, Poate JM, Jacobson DC, Hull R. The effect of pressure on the solid phase epitaxial regrowth rate of Si. Appl. Phys. Lett. 1985;47 :232-233. mja012.pdf
Narayan J, James RV, Holland OW, Aziz MJ. Pulsed excimer and CO_2 laser annealing of ion implanted silicon. J. Vac. Sci. Technol. A . 1985;3 :1836-1838. mja013.pdf
Aziz MJ, White CW, Narayan J, Stritzker B. Melting of crystalline and amorphous silicon by ruby, XeCl and KrF laser irradiation. In: Energy Beam-Solid Interactions and Transient Thermal Processing. Paris: Éditions de Physique ; 1985. pp. 231-236. mja014.pdf
Aziz MJ. Crystal growth and solute trapping. Mater. Res. Soc. Symp. Proc. 1984;23 :369-374. mja004.pdf
Narayan J, White CW, Holland OW, Aziz MJ. Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers. J. Appl. Phys. 1984;56 :1821-1830. mja005.pdf
Aziz MJ. Model for solute redistribution during rapid solidification. J. Appl. Phys. 1982;53 :1158-1168. mja001.pdf
Aziz MJ. An atomistic model of solute trapping. In: Rapid Solidification Processing: Principles and Technologies III. Gaithersburg, MD: National Bureau of Standards ; 1982. pp. 113-117. mja002.pdf
Kittl JA, Aziz MJ, Brunco DP, Thompson MO. Time-Resolved Temperature Measurements During Pulsed Laser Irradiation. Proceedings of the Annual Meeting of the IEEE Lasers and Electro-Optics Society. 1973 :774-775. mja098.pdf