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Publications

2005
H. H. Chen, O.A. Urquidez, S. Ichim, L. Humberto Rodriguez, M.P. Brenner, and M. J. Aziz. 2005. “Shocks in Ion Sputtering Sharpen Steep Surface Features.” Science, 310, 294.
V. Ramaswamy, T.E. Haynes, C.W. White, W.J. MoberlyChan, S. Roorda, and M. J. Aziz. 2005. “Synthesis of Nearly Monodisperse Embedded Nanoparticles by Separating Nucleation and Growth in Ion Implantation.” Nano Lett., 5, Pp. 373-377.
C.B. Arnold and M. J. Aziz. 2005. “Unified Kinetic Model of Dopant Segregation during Vapor Phase Growth.” Phys. Rev. B, 72, 195419.
2004
C. H. Crouch, J. E. Carey, J. M. Warrender, M. J. Aziz, and E. Mazur. 2004. “Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon.” Appl. Phys. Lett., 84, 1850.
D. Margetis, M. J. Aziz, and H.A. Stone. 2004. “Continuum Description of Profile Scaling in Nanostructure Decay.” Phys. Rev. B, 69, 041404.
J. M. Warrender and M. J. Aziz. 2004. “Evolution of Ag Nanocrystal Films Grown by Pulsed Laser Deposition.” Appl. Phys. A, 79, Pp. 713-716.
W. Barvosa-Carter, M. J. Aziz, A.-V. Phan, T. Kaplan, and L.J. Gray. 2004. “Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects.” J. Appl. Phys., 96, Pp. 5462-5468.
A.D. Brown, H. B. George, M. J. Aziz, and J.D. Erlebacher. 2004. “One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon.” Mater. Res. Soc. Symp. Proc., 792, R7.8.
J.P. Leonard, M. J. Aziz, T.J. Renk, and M.O. Thompson. 2004. “Solute diffusion in liquid nickel measured by pulsed ion beam melting.” Metall. Trans. A, 35, Pp. 2803-2807.
M. J. Aziz. 2004. “Tests of Theories for Nonplanar Growth During Rapid Alloy Solidification.” Edited by M. Rappaz. Solidification Processes and Microstructures : A Symposium in Honor to Wilfried Kurz. Warrendale, PA: TMS.
2003
J.P. Leonard, B. Shin, J.W. McCamy, and M. J. Aziz. 2003. “Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE.” Mater. Res. Soc. Symp. Proc., 749, W16.11.
M. J. Aziz. 2003. “Dopant Diffusion under Pressure and Stress.” Proceedings of 2003 International Conference on Simulation of Semiconductor Processes and Devices. Cambridge, MA.
M.A. Scarpulla, O.D. Dubon, K.M. Yu, O. Monteiro, M. Pillai, M. J. Aziz, and M.C. Ridgway. 2003. “Ferromagnetic Ga_1-xMn_xAs Films Produced by Ion Implantation and Pulsed Laser Melting.” Appl. Phys. Lett., 82, Pp. 1251-1253.
W. Zhou, A. Cuenat, and M. J. Aziz. 2003. “Formation of Self-organized Nanostructures on Ge During Focused Ion Beam Sputtering.” Edited by A.G. Cullis and P.A. Midgley. Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on Microscopy of Semiconducting Materials. Institute of Physics and IOP Publishing Limited.
C.B. Arnold and M. J. Aziz. 2003. “Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach.” Mater. Res. Soc. Symp. Proc., 749, W14.3.
J. M. Warrender and M. J. Aziz. 2003. “Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition.” Mater. Res. Soc. Symp. Proc., 749, W.3.1.
E. Chason and M. J. Aziz. 2003. “Spontaneous Formation of Patterns on Sputtered Surfaces.” Scripta Materialia, 49, 953.
K.M. Yu, W. Walukiewicz, M.A. Scarpulla, O.D. Dubon, J. Wu, J. Jasinski, Z. Liliental-Weber, J.W. Beeman, M.R. Pillai, and M. J. Aziz. 2003. “Synthesis of GaN_xAs_1-x thin films by pulsed laser melting and rapid thermal annealing of N^+-implanted GaAs.” J. Appl. Phys., 94, Pp. 1043-1049.
2002
P.W. Voorhees and M. J. Aziz. 2002. “The Effects of a Stress-Dependent Mobility on Interfacial Stability.” In Interfaces for the Twenty-First Century: New Research Directions in Fluid Mechanics and Materials Science, edited by M.K. Smith, M.J. Miksis, G.B. McFadden, G.P. Neitzel, and D.R. Canright. London: Imperial College Press.
K.M. Yu, W. Walukiewicz, J.W. Beeman, M.A. Scarpulla, O.D. Dubon, M.R. Pillai, and M. J. Aziz. 2002. “Enhanced Nitrogen Incorporation by Pulsed Laser Melting of GaN_xAs_1-x Formed by N Implantation.” Appl. Phys. Lett., 80, Pp. 3958-3960.

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