Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
Publication information:
D. Recht, J.T. Sullivan, R. Reedy, T. Buonassisi, and M. J. Aziz. 2012. “Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting”. Appl. Phys. Lett., 100, 112112