Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting

Citation:

D. Recht, J.T. Sullivan, R. Reedy, T. Buonassisi, and M. J. Aziz. 2012. “Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting.” Appl. Phys. Lett., 100, 112112.

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Last updated on 02/20/2022

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