Publications
360 results
360 results
1985
E. Nygren, M. J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson, and R. Hull. 1985. “The Effect of Pressure on the Solid Phase Epitaxial Regrowth Rate of Si”. Appl. Phys. Lett., 47, Pp. 232-33
E. Nygren, M. J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson, and R. Hull. 1985. “The Effect of Pressure on the Solid Phase Epitaxial Regrowth Rate of Si”. Appl. Phys. Lett., 47, Pp. 232-33
J. Narayan, R.V. James, O.W. Holland, and M. J. Aziz. 1985. “Pulsed Excimer and CO_2 Laser Annealing of Ion Implanted Silicon”. J. Vac. Sci. Technol. A, 3, Pp. 1836-38
J. Narayan, R.V. James, O.W. Holland, and M. J. Aziz. 1985. “Pulsed Excimer and CO_2 Laser Annealing of Ion Implanted Silicon”. J. Vac. Sci. Technol. A, 3, Pp. 1836-38
M. J. Aziz, C.W. White, J. Narayan, and B. Stritzker. 1985. “Melting of Crystalline and Amorphous Silicon by Ruby, XeCl and KrF Laser Irradiation”. In Energy Beam-Solid Interactions and Transient Thermal Processing, Pp. 231-36. Paris: Éditions de Physique
M. J. Aziz, C.W. White, J. Narayan, and B. Stritzker. 1985. “Melting of Crystalline and Amorphous Silicon by Ruby, XeCl and KrF Laser Irradiation”. In Energy Beam-Solid Interactions and Transient Thermal Processing, Pp. 231-36. Paris: Éditions de Physique
J. Narayan, C.W. White, M. J. Aziz, B. Stritzker, and A. Walthuis. 1985. “Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers”. J. Appl. Phys., 57, Pp. 564-67
J. Narayan, C.W. White, M. J. Aziz, B. Stritzker, and A. Walthuis. 1985. “Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers”. J. Appl. Phys., 57, Pp. 564-67
M. J. Aziz, E. Nygren, J.F. Hays, and D. Turnbull. 1985. “Crystal Growth Kinetics of Boron Oxide under Pressure”. J. Appl. Phys., 57, Pp. 2233-42
M. J. Aziz, E. Nygren, J.F. Hays, and D. Turnbull. 1985. “Crystal Growth Kinetics of Boron Oxide under Pressure”. J. Appl. Phys., 57, Pp. 2233-42
M. J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy, C.W. White, and W.H. Christie. 1985. “A Test of Two Solute Trapping Models”. Mater. Res. Soc. Symp. Proc., 35, Pp. 153-58
M. J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy, C.W. White, and W.H. Christie. 1985. “A Test of Two Solute Trapping Models”. Mater. Res. Soc. Symp. Proc., 35, Pp. 153-58
1984
M. J. Aziz. 1984. “Crystal Growth and Solute Trapping”. Mater. Res. Soc. Symp. Proc., 23, Pp. 369-74
M. J. Aziz. 1984. “Crystal Growth and Solute Trapping”. Mater. Res. Soc. Symp. Proc., 23, Pp. 369-74
J. Narayan, C.W. White, O.W. Holland, and M. J. Aziz. 1984. “Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers”. J. Appl. Phys., 56, Pp. 1821-30
J. Narayan, C.W. White, O.W. Holland, and M. J. Aziz. 1984. “Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers”. J. Appl. Phys., 56, Pp. 1821-30
1983
M. J. Aziz. 1983. “Dissipation-Theory Treatment of the Transition from Diffusion-Controlled to Diffusionless Solidification”. Appl. Phys. Lett., 43, Pp. 552-54
M. J. Aziz. 1983. “Dissipation-Theory Treatment of the Transition from Diffusion-Controlled to Diffusionless Solidification”. Appl. Phys. Lett., 43, Pp. 552-54
1982
M. J. Aziz. 1982. “Model for Solute Redistribution During Rapid Solidification”. J. Appl. Phys., 53, Pp. 1158-68
M. J. Aziz. 1982. “Model for Solute Redistribution During Rapid Solidification”. J. Appl. Phys., 53, Pp. 1158-68
M. J. Aziz. 1982. “An Atomistic Model of Solute Trapping”. In Rapid Solidification Processing: Principles and Technologies III, Pp. 113-17. Gaithersburg, MD: National Bureau of Standards
M. J. Aziz. 1982. “An Atomistic Model of Solute Trapping”. In Rapid Solidification Processing: Principles and Technologies III, Pp. 113-17. Gaithersburg, MD: National Bureau of Standards
1973
J.A. Kittl, M. J. Aziz, D.P. Brunco, and M.O. Thompson. 1973. “Time-Resolved Temperature Measurements During Pulsed Laser Irradiation”
J.A. Kittl, M. J. Aziz, D.P. Brunco, and M.O. Thompson. 1973. “Time-Resolved Temperature Measurements During Pulsed Laser Irradiation”