Citation:
O.D. Dubon, P.G. Evans, M.F. Chisholm, D. A. Muller, J.F. Chervinsky, M. J. Aziz, F. Spaepen, and J.A. Golovchenko. 2001. “Doping by Metal-mediated Epitaxy: Growth of As Delta-doped Si Through a Pb Monolayer.” Appl. Phys. Lett., 78, Pp. 1505-1507.