Citation:
K.M. Yu, W. Walukiewicz, J.W. Beeman, M.A. Scarpulla, O.D. Dubon, M.R. Pillai, and M. J. Aziz. 2002. “Enhanced Nitrogen Incorporation by Pulsed Laser Melting of GaN_xAs_1-x Formed by N Implantation.” Appl. Phys. Lett., 80, Pp. 3958-3960.