Citation:
A.-V. Phan, T. Kaplan, L.J. Gray, W. Barvosa-Carter, and M. J. Aziz. 2002. “Modeling a Growth Instability in Stressed Boron Doped Silicon.” Proceedings of Fifth International Conference on Modeling and Simulation of Microsystems.
Aziz Group
Electrochemical engineering for energy and the environment
Search:
Recent Publications
- 200-fold lifetime extension of 2,6-dihydroxyanthraquinone during flow battery operation
- In Situ Techniques for Quinone-Mediated Electrochemical Carbon Capture and Release in Aqueous Environments
- Electrochemically induced CO2 capture enabled by aqueous quinone flow chemistry
- Mild pH-decoupling Aqueous Flow Battery with Practical pH Recovery
- Reversible CO2 Capture and On-Demand Release by an Acidity-Matched Organic Photoswitch
Copyright © 2024 The President and Fellows of Harvard College | Accessibility | Digital Accessibility | Report Copyright Infringement