Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point defect mechanisms
Publication information:
G.-Q. Lu, E. Nygren, and M. J. Aziz. 1991. “Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point Defect Mechanisms”. J. Appl. Phys., 70, Pp. 5323-45