Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Publication information:
Tuan T. Tran, Huda S. Alkhaldi, Hemi H. Gandhi, David Pastor, Larissa Q. Huston, Jennifer Wong-Leung, Michael J. Aziz, and J. S. Williams. 2016. “Suppression of Ion-Implantation Induced Porosity in Germanium by a Silicon Dioxide Capping Layer”. Applied Physics Letters, 109, 082106