Synthesis of Ge1-xSnx Alloys by Ion Implantation and Pulsed Laser Melting: Towards a Group IV Direct Bandgap Material
Publication information:
T.T. Tran, D. Pastor, H.H. Ghandi, L.A. Smillie, A.J. Akey, M. J. Aziz, and S.J. Williams. 2016. “Synthesis of Ge1-XSnx Alloys by Ion Implantation and Pulsed Laser Melting: Towards a Group IV Direct Bandgap Material”. Journal of Applied Physics, 119, 183102