Composition Dependence of Schottky Barrier Heights and Band Gap Energies of GaN_xAs_1-x synthesized by ion implantation and pulsed laser melting
Publication information:
T. Kim, K. Alberi, O.D. Dubon, M. J. Aziz, and V. Narayanamurti. 2008. “Composition Dependence of Schottky Barrier Heights and Band Gap Energies of GaN_xAs_1-X Synthesized by Ion Implantation and Pulsed Laser Melting”. J. Appl. Phys., 104, 113722