Citation:
J. P. Mailoa, A.J. Akey, C.B. Simmons, D. Hutchinson, J. Mathews, J.T. Sullivan, D. Recht, M. T. Winkler, J. S. Williams, J. M. Warrender, P.D. Persans, M. J. Aziz, and T. Buonassisi. 2014. “Room-temperature sub-band gap optoelectronic response of hyperdoped silicon.” Nature Communications, 5, Pp. 3011.
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